2SC3085 查看數據表（PDF） - Inchange Semiconductor
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2SC3085 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3085
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=16A; IB= 3.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 16A; IB= 3.2A
ICBO
Collector Cutoff Current
VCB= 400V; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 3.2A; VCE= 5V
hFE-2
DC Current Gain
IC= 16A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 3.2A; VCE= 10V
MIN TYP. MAX UNIT
400
V
500
V
7
V
1.0
V
1.5
V
10
μA
10
μA
15
50
8
320
pF
20
MHz
hFE-1 Classifications
L
M
N
15-30 20-40 30-50
isc website：www.iscsemi.com
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