C6017 查看數據表（PDF） - Inchange Semiconductor
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C6017 Datasheet PDF : 3 Pages
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6017
DESCRIPTION
·Large current capacitance
·High-speed switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·Complementary to 2SA2169
APPLICATIONS
·relay drivers,lamp drivers,motor drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
13
A
20
W
0.95
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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