C6017 查看數據表（PDF） - Inchange Semiconductor

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C6017

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SC6017

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 250mA

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB= 250mA

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 100uA; IC= 0

ICBO

Collector Cutoff Current

VCB= 40V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE

DC Current Gain

IC= 1A; VCE= 2V

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1.0MHz

fT

Current-Gain—Bandwidth Product IC= 1A; VCE= 5V

MIN TYP. MAX UNIT

0.36

V

1.4

V

50

V

6

V

10

μA

10

μA

200

700

60

pF

200

MHz

isc website：www.iscsemi.com

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