2SC4672(2002) 查看數據表（PDF） - Secos Corporation.
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2SC4672 Datasheet PDF : 2 Pages
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Elektronische Bauelemente
Description
The 2SC4672 is designed for low
frequency amplifier applications.
2SC4672
NPN Silicon
Epitaxial Silicon Transistor
RoHS Compliant Product
SOT-89
Features
* Excellent DC Current Gain Characteristics
* Low Saturation Voltage, Typically VCE(SAT)=0.1V
At IC/IB=1A/50mA
o
Absolute Maximum Ratings at TA=25 C
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Junction and Storage Temperature
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Value
60
50
6
2
5
2
-55~+150
Units
V
V
V
A
W
CO
ELECTRICAL CHARACTERISTICS Tamb=25oC unless otherwise specified
Parameter
Symbol Min Typ. Max
Collector-Base Breakdown Voltage
BVCBO
60
-
-
Collector-Emitter Breakdown Voltage
BVCEO
50
-
-
Emitter-Base Breakdown Voltage
BVEBO
6
-
-
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ICBO
-
-
100
IEBO
-
-
100
Collector Saturation Voltage
*VCE(sat)
-
0.1 0.35
DC Current Gain
Gain-Bandwidth Product
*hFE
120
-
400
fT
-
210
-
Output Capacitance
Cob
-
25
-
* Measured under pulse condition.Pulse width≦380µs, Duty Cycle≦2%
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
I C=50 µA,IE=0
IC=1mA,IB=0
I E=50 µA,IC=0
VCB= 60V,IE=0
VEB=5V,IC=0
IC=1A,IB=50mA
VCE= 2 V, IC=500 mA
VCE= 2 V, IC=500mA,f=100MHz
VCB=10V, f=1MHz,IE=0
Classification of hFE
Rank
Range
A
120~240
B
200~400
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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