2SC4422 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SC4422

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC4422

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

15

V

11

V

2

V

50

mA

400

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V(BR)CBO

15

—

—

V

voltage

IC = 10 µA, IE = 0

Collector cutoff current

I CBO

I CEO

Emitter cutoff current

I EBO

DC current transfer ratio

hFE

Collector output capacitance Cob

Gain bandwidth product

fT

Power gain

PG

—

—

1

µA

VCB = 12 V, IE = 0

—

—

1

µA

VCE = 10 V, RBE = ∞

—

—

1

µA

VEB = 1 V, IC = 0

50

—

250

VCE = 5 V, IC = 20 mA

—

1.2 1.6 pF

VCB = 5 V, IE = 0, f = 1 MHz

4.5

6.0

—

GHz VCE = 5 V, IC = 20 mA

7.0

9.0

—

dB

VCE = 5 V, IC = 20 mA,

f = 900 MHz

Noise figure

NF

—

1.6 3.0 dB

VCE = 5 V, IC = 5 mA,

f = 900 MHz

Note: Marking is “CR”.

2

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