Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
2SC4627 查看數據表(PDF) - Galaxy Semi-Conductor
零件编号
产品描述 (功能)
生产厂家
2SC4627
NPN High-frequency Transistor
Galaxy Semi-Conductor
2SC4627 Datasheet PDF : 4 Pages
1
2
3
4
Production specification
NPN High-frequency
Transistor
2SC4627
ELECTRICAL CHARACTERISTICS
@ Ta=25
℃
unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V
(BR)CBO
I
C
=10
μ
A,I
E
=0
30
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=10
μ
A,I
C
=0
3
V
DC current gain
h
FE
V
CB
=6V,I
E
=-1mA
40
260
Base-emitter voltage
V
BE
Transition frequency
f
T
Common-collector reverse transfer
capacitance
C
re
CLASSIFICATION OF H
FE
RANK
B
RANGE
40-110
V
CB
=6V,I
E
=-1mA
V
CE
=12V,
I
E
=-1mA,f=200MHz
V
CB
=6V,
I
E
=-1mA,f=10.7MHz
0.72
450 650
0.8
V
MHz
1 Pf
C
65-160
D
100-260
H034
Rev.A
www.gmicroelec.com
2
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]