2SD1615-M 查看數據表（PDF） - KEXIN Industrial
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2SD1615-M Datasheet PDF : 3 Pages
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SMD Type
Transistors
NPN Transistors
■ Typical Characterisitics
TOTAL POWER DISSIPATION vs.
AM BIENT TEM PERATURE
2.5
2SD1615
SAFE OPERATING AREA
(TRANSIENT THERM AL RESISTANCE
M ETHOD)
5
1 pulse
2
2.0
1
1.5
0.5
200 ms
1.0
0.5
w ithout heatsink
0
40
80
120
160
200
TA – Ambient Temperature – ˚C
COLLECTOR CURRENT vs.
BASE TO EM ITTER VOLTAGE
100
300 µA
200 µA
80
200 µA
60
150 µA
40
100 µA
20
IB = 50 µA
0.2
DC
0.1
0.05
0.02
0.01
12
5 10 20
50 100
VCE – Collector to Emitter Voltage – V
COLLECTOR CURRENT vs.
COLLECTOR TO EM ITTER VOLTAGE
1.0 5.0 mA
4.5 mA
4.0 mA 3.5 mA 3.0 mA
0.8
2.5 mA
2.0 mA
0.6
1.5 mA
0.4
1.0 mA
0.2
IB = 0.5 mA
0
2
4
6
8
10
VCE – Collector to Emitter Voltage – V
1000
500
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2.0 V
200
100
50
20
10
5
0.01 0.02 0.05 0.1 0.2 0.5 1 2
IC – Collector Current – A
5 10
2 www.kexin.com.cn
0
0.2
0.4
0.6
0.8
1.0
VCE(sat) – Collector Saturation Voltage – V
COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT
2
IC = 20·IB
1
VBE(sat)
0.5
0.2
0.1
0.05
0.02
VCE(sat)
0.01 0.02 0.05 0.1 0.2 0.5 1 2
IC – Collector Current – A
5 10
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