D1788 查看數據表（PDF） - Inchange Semiconductor
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D1788 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1788
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=1A; IB=2mA
VBEsat Base-emitter saturation voltage
IC=1A; IB=2mA
ICBO
Collector cut-off current
VCB=100V; IE=0
ICEO
Collector cut-off current
VCE=100V; IB=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=1A ; VCE=3V
fT
Transition frequency
IC=0.4A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A;IB1=IB2=2mA,
RL=25Ω;VBB2=4V
MIN TYP. MAX UNIT
1.5
V
2.0
V
0.1
mA
0.1
mA
5
mA
1500
30000
20
MHz
2.0
μs
12
μs
5.0
μs
2
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