2SD2141 查看數據表（PDF） - Inchange Semiconductor

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2SD2141

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

2SD2141

DESCRIPTION

·High DC Current Gain-

: hFE = 1500(Min)@ IC= 3A

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = 1.5V(Max)@ IC= 4A

·Incorporating a built-in zener diode

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for use in ignitor, driver for solenoid，motor and

general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current-Continuous

ICM

Base Current-Peak

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

330-430

V

330-430

V

6

V

6

A

10

A

1

A

35

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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