2SD2141 查看數據表（PDF） - Inchange Semiconductor

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2SD2141

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor

2SD2141

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0

330

430

V

V(BR)CBO Collector-Base Breakdown Voltage

IC=0.1mA; IE= 0

330

430

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 20mA; IC= 0

6

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 20mA

VBE(sat) Base-Emitter Saturation Voltage

IC= 4A; IB= 20mA

ICBO

Collector Cutoff Current

VCB= 330V; IE= 0

1.5

V

2.0

V

10

μA

IEBO

Emitter Cutoff Current

hFE

DC Current Gain

fT

Current-Gain—Bandwidth Product

COB

Output Capacitance

VEB= 6V; IC= 0

IC= 3A; VCE= 2V

1500

IE= 0.5A ; VCE= 12V

20

IE=0 ; VCB=10V;ftest=1.0MHz

95

20

mA

MHz

pF

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