2SJ479 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SJ479 Datasheet PDF : 7 Pages
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2SJ479(L), 2SJ479(S)
Main Characteristics
Power vs. Temperature Derating
100
75
50
25
0
50
100
150
200
Case Temperature Tc (°C)
–500
Maximun Safe Operation Area
–200
–100
10 µs
–50
–20
–10
–5
Operation
PW
in
=
10
1 ms
ms (1shot)
this area is
–2
limited by R DS(on)
–1
–0.5 Ta = 25 °C
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage VDS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 µ
100 µ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 2.5 °C/W, Tc = 25 °C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
4
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