Marking
ZF
Lot No.
2SJ511
Note 5: A line to the right of a Lot No. identifies the indication of
Part No.
(or abbreviation code)
product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Note 5
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = −30 V, VGS = 0 V
V (BR) DSS ID = −10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = −10 V, ID = −1 mA
VGS = −4 V, ID = −1 A
VGS = −10 V, ID = −1 A
VDS = −10 V, ID = −1 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
tr
Turn−on time
ton
Switching time
Fall time
tf
Turn−off time
toff
Total gate charge (Gate−source
plus gate−drain)
Qg
Gate−source charge
Qgs
VDD ≈ −24 V, VGS = −10 V, ID = −2 A
Gate−drain (“miller”) charge
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
(Note 1)
IDR (Note 1)
—
Pulse drain reverse current
(Note 1)
IDRP (Note 1)
—
Forward voltage (diode)
VDSF
IDR = −2 A, VGS = 0 V
Reverse recovery time
Reverse recovery charge
trr
IDR = −2 A, VGS = 0 V
Qrr
dIDR / dt = 50 A / μs
2
Min Typ. Max Unit
—
—
±10
μA
—
— −100 μA
−30 —
—
V
−0.8 —
−2.0
V
— 0.55 0.76
Ω
— 0.32 0.45
0.7 1.4
—
S
— 160 —
—
30
—
pF
—
85
—
—
30
—
—
45
—
ns
—
30
—
— 120 —
—
5.5
—
—
4.3
—
nC
—
1.2
—
Min Typ. Max Unit
—
—
−2
A
—
—
−6
A
—
—
1.5
V
—
40
—
ns
—
18
—
nC
2009-09-29