2SK3816 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
2SK3816 Datasheet PDF : 7 Pages
| |||
2SK3816
Continued from preceding page.
Parameter
Symbol
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=20V, L=50μH, IAV=40A (Fig.1)
*2 L≤50μH, single pulse
Conditions
Ratings
Unit
150
°C
--55 to +150
°C
60 mJ
40
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=20A
ID=20A, VGS=10V
ID=20A, VGS=4V
VDS=20V, f=1MHz
See Fig.2
VDS=30V, VGS=10V, ID=40A
IS=40A, VGS=0V
Ratings
Unit
min
typ
max
60
V
1
μA
±10
μA
1.2
2.6
V
16
27
S
20
26 mΩ
28
40 mΩ
1780
pF
266
pF
197
pF
16.5
ns
160
ns
160
ns
160
ns
40
nC
6.5
nC
11.5
nC
1.05
1.5
V
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
≥50Ω
RG G
D
L
DUT
VIN
10V
0V
VIN
VDD=30V
ID=20A
RL=1.5Ω
2SK3816
10V
0V
50Ω
S
VDD
D
PW=10μs
D.C.≤1%
G
VOUT
2SK3816
P.G
50Ω
S
No.8054-2/7
Share Link: 