TISP3072F3DR(2008) 查看數據表（PDF） - Bourns, Inc

零件编号

产品描述 (功能)

生产厂家

TISP3072F3DR
(Rev.:2008)

LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

Bourns, Inc 

TISP30xxF3 (LV) Overvoltage Protector Series

Electrical Characteristics for T and G or R and G Terminals, TA = 25 °C (Unless Otherwise Noted)

IDRM

Parameter

Repetitive peak off-

state current

Test Conditions

VD = ±VDRM, 0 °C < TA < 70 °C

V(BO) Breakover voltage

Impulse breakover

V(BO) voltage

I(BO)

VT

IH

dv/dt

ID

Breakover current

On-state voltage

Holding current

Critical rate of rise of

off-state voltage

Off-state current

Coff Off-state capacitance

dv/dt = ±250 V/ms, RSOURCE = 300 Ω

dv/dt ≤ ±1000 V/µs, Linear voltage ramp,

Maximum ramp value = ±500 V

RSOURCE = 50 Ω

dv/dt = ±250 V/ms, RSOURCE = 300 Ω

IT = ±5 A, tW = 100 µs

IT = ±5 A, di/dt = -/+30 mA/ms

Linear voltage ramp, Maximum ramp value < 0.85VDRM

VD = ±50 V

f = 1 MHz, Vd = 0.1 V r.m.s., VD = 0

f = 1 MHz, Vd = 0.1 V r.m.s., VD = -5 V

f = 1 MHz, Vd = 0.1 V r.m.s., VD = -50 V

(see Notes 5 and 6)

Min Typ

‘3072F3

‘3082F3

‘3072F3

±86

‘3082F3

±96

±0.1

±0.15

±5

82

49

25

Max

±10

±72

±82

±0.6

±3

±10

140

85

40

Unit

µA

V

V

A

V

A

kV/µs

µA

pF

NOTES: 6. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is

connected to the guard terminal of the bridge.

7. Further details on capacitance are given in the Applications Information section.

Thermal Characteristics

Parameter

RθJA Junction to free air thermal resistance

Test Conditions

Ptot = 0.8 W, TA = 25 °C

5 cm2, FR4 PCB

Min Typ Max Unit

160 °C/W

MARCH 1994 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Share Link: