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MBT3946DW1T2G(2009) 查看數據表(PDF) - ON Semiconductor

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产品描述 (功能)
生产厂家
MBT3946DW1T2G
(Rev.:2009)
ONSEMI
ON Semiconductor ONSEMI
MBT3946DW1T2G Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
MBT3946DW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
(IC = 1.0 mAdc, IB = 0)
Collector Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = 10 mAdc, IE = 0)
Emitter Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(PNP)
(NPN)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(PNP)
(NPN)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
http://onsemi.com
2
Min
Max
Unit
Vdc
40
40
Vdc
60
40
Vdc
6.0
5.0
nAdc
50
50
nAdc
50
50
40
70
100
300
60
30
60
80
100
300
60
30
Vdc
0.2
0.3
0.25
0.4
Vdc
0.65
0.85
0.95
0.65
0.85
0.95
MHz
300
250
pF
4.0
4.5
pF
8.0
10.0
kW
1.0
10
2.0
12
X 104
0.5
8.0
0.1
10
100
400
100
400

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