MBRF1545CT 查看數據表（PDF） - Diode Semiconductor Korea
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MBRF1545CT Datasheet PDF : 2 Pages
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Diode Semiconductor Korea MBRF1530CT---MBRF15100CT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 30 - 100 V
CURRENT: 15 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC ITO-220AB,m olded plas tic body
Term inals :Solderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight: 0.06ounce, 1.67 grams
ITO-220AB
10.2± 0.2
4.5± 0.2
3.1+-00..12
PIN
1 23
4.0± 0.3
1.4± 0.1
0.6± 0.1
2.6± 0.15
2.6± 0.2
0.6± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m rectif ied current @TC = 105°C
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
MBRF
1530CT
MBRF
1535CT
MBRF MBRF MBRF MBRF
1540CT 1545CT 1550CT 1560CT
MBRF MBRF
1580CT 15100CT
UNITS
VRRM 30
35
40
45
50
60
80 100
V
V R MS
21
25
28
32
35
42
56
70
V
VDC
30
35
40
45
50
60
80 100
V
IF(AV)
15
A
IFSM
150
A
Maximum forward
v oltage
(Note 1)
(IF=7.5A,TC=25 )
(IF=7.5A,TC=125 )
(I F=15A ,TC=25 )
(IF=15A,TC=125 )
Maximum reverse current
@T =25
C
at rated DC blocking voltage @TC=125
Maximum thermal resistance (Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
3.TC=100
VF
IR
R θJC
TJ
TSTG
-
0.57
0.84
0.72
0.1
15
0.75
0.65
-
-
1.0
50
3.0
- 55 ---- + 150
- 55 ---- + 150
0.80
-
-
-
0.1
6.0 3)
V
mA
/W
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