MCH3477 查看數據表（PDF） - ON Semiconductor
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MCH3477 Datasheet PDF : 5 Pages
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MCH3477
Power MOSFET
20V, 38mΩ, 4.5A, Single N-Channel
www.onsemi.com
Features
High Speed Switching
1.8V Drive
ESD Diode-Protected Gate
Low On-Resistance
Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
Drain Current (DC)
VGSS
ID
Drain Current (Pulse)
PW10s, duty cycle1%
IDP
Power Dissipation
When mounted on ceramic substrate
PD
(900mm20.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm20.8mm)
Symbol
RJA
Value
Unit
20
V
12
V
4.5
A
18
A
1.0
W
150
C
55 to +150
C
Value
Unit
125
C/W
VDSS
20V
RDS(on) Max
38 mΩ@4.5V
61 mΩ@2.5V
99 mΩ@1.8V
ID Max
4.5A
Electrical Connection
N-Channel
3
1
1 : Gate
2 : Source
3 : Drain
2
Packing Type:TL
Marking
FJ
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
January 2015 - Rev. 2
Publication Order Number :
MCH3477/D
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