MCH3477 查看數據表（PDF） - ON Semiconductor

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MCH3477

Power MOSFET 20V, 38mΩ, 4.5A, Single N-Channel

ON Semiconductor 

Electrical Characteristics at Ta  25C

Parameter

Symbol

Drain to Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate to Source Leakage Current

Gate Threshold Voltage

Forward Transconductance

Static Drain to Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Forward Diode Voltage

V(BR)DSS

IDSS

IGSS

VGS(th)

gFS

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

MCH3477

Conditions

ID=1mA, VGS=0V

VDS=20V, VGS=0V

VGS=±8V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=2A

ID=2A, VGS=4.5V

ID=1A, VGS=2.5V

ID=0.5A, VGS=1.8V

VDS=10V, f=1MHz

See specified Test Circuit

VDS=10V, VGS=4.5V, ID=4.5A

IS=4.5A, VGS=0V

min

20

Value

typ

0.4

2.0

3.4

29

43

69

410

84

59

7.5

26

38

32

5.1

0.7

1.7

0.78

Unit

max

V

1 A

10 A

1.3

V

S

38 m

61 m

99 m

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

1.2

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.

Switching Time Test Circuit

VIN

4.5V

0V

VIN

PW=10s

D.C.≤1%

G

VDD=10V

ID=2A

RL=5

D

VOUT

P.G

50

MCH3477

S

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