MCH3474-TL-H 查看數據表（PDF） - ON Semiconductor

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MCH3474-TL-H

Power MOSFET 30V, 50mΩ, 4A, Single N-Channel

ON Semiconductor 

MCH3474

Power MOSFET

30V, 50mΩ, 4A, Single N-Channel

This Power MOSFET is produced using ON Semiconductor’s trench

technology, which is specifically designed to minimize gate charge and low

on resistance. This device is suitable for applications with low gate charge

driving or low on resistance requirements.

Features

• Low On-Resistance

• High Speed Switching

• 1.8V drive

• ESD Diode-Protected Gate

• Pb-Free, Halogen Free and RoHS compliance

Typical Applications

• DC/DC Converter

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)

Parameter

Symbol

Value

Unit

Drain to Source Voltage

VDSS

30

V

Gate to Source Voltage

VGSS

±12

V

Drain Current (DC)

ID

4

A

Drain Current (Pulse)

PW ≤ 10μs, duty cycle ≤ 1%

IDP

16

A

Power Dissipation

When mounted on ceramic substrate

PD

(900mm2 × 0.8mm)

1

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Junction to Ambient

When mounted on ceramic substrate

(900mm2 × 0.8mm)

Symbol

RθJA

Value

Unit

125 °C/W

www.onsemi.com

VDSS

30V

RDS(on) Max

50mΩ@ 4.5V

72mΩ@ 2.5V

130mΩ@ 1.8V

ID Max

4A

ELECTRICAL CONNECTION

N-Channel

PACKING TYPE : TL MARKING

FF

TL

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2015

1

June 2015 - Rev. 1

Publication Order Number :

MCH3474/D

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