RB160M-30 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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RB160M-30 Datasheet PDF : 4 Pages
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Typical Characteristics
Forward Characteristics
1000
100
Ta=100℃
10
1
Ta=25℃
0.1
0.01
0.0
0.1
0.2
0.3
0.4
0.5
FORWARD VOLTAGE VF (V)
300
250
200
150
100
50
0
0
Capacitance Characteristics
Ta=25℃
f=1MHz
5
10
15
20
REVERSE VOLTAGE VR (V)
10000
1000
Reverse Characteristics
Ta=100℃
100
10
Ta=25℃
1
0.1
0
5
10
15
20
25
30
REVERSE VOLTAGE VR (V)
500
450
400
350
300
250
200
150
100
50
0
0
Power Derating Curve
25
50
75
100
125
AMBIENT TEMPERATURE Ta (℃)
High Diode Semiconductor
2
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