RD51E 查看數據表（PDF） - New Jersey Semiconductor
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RD51E Datasheet PDF : 5 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Dnc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
ZENER DIODES
RD2.0EtoRD120E
500 mW PLANAR TYPE SILICON ZENER DIODES
The RD2.0E to RD120E are zener diodes with an allowable
dissipation of 500 mW and a planar type glass sealed DHD
(double heatsink diode) structure.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• The zener voltage series has a wide voltage range of 2 V to 120
V and is ideal for standardization.
• The E24 series is employed for the zener voltage nominal
value.
02.0* MAX.
Cathode mark
ORDERING INFORMATION
Any of the B1 to B7 voltage classifications are available for
customers who request the B grade product of the RD2.0E to
RD39E.
APPLICATIONS
• Zener voltage and constant-current circuit
• Waveform clipper Circuit and limiter circuit
• Surge absorption circuit
Marking color: Black
JEDEC: DO-35
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Power dissipation
Junction temperature
Forward current
Storage temperature
Surge reverse power
Symbol
P
Ti
IF
Tslg
PHSM
Ratings
500
175
200
-65to+175
100(t = 100/js)
Unit
Remarks
mW
°C
mA
°C
w
Refer to Figure 6.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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