RMB2S 查看數據表（PDF） - Sangdest Microelectronic (Nanjing) Co., Ltd

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RMB2S

Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifiers

Sangdest Microelectronic (Nanjing) Co., Ltd 

Technical Data

Data Sheet N1651, Rev. -

RMB2S-RMB6S

Green Products

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified

Single Phase half wave 60Hz, resistive or inductive load. For capacitive load current derate by 20%.

Characteristic

Maximum repetitive peak reverse voltage

RMS Reverse Voltage

Maximum DC blocking voltage

Maximum average forward current

60Hz sine save resistance load

On glass-epoxy P.C.B.

On aluminum substrate

Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated

load (JEDEC Method)

Maximum instantaneous forward voltage drop (Note

1)@ IF = 0.4A

Maximum DC reverse current TA = 25°C

at rated DC blocking voltage TA = 125°C

Maximum reverse recovery time(Note 2)

Typical junction capacitance (per leg)

Typical thermal resistance

Operating junction and storage temperature range

Symbol

VRRM

VR(RMS)

VDC

IF(AV)

IFSM

VF

IR

trr

Cj

RθJA

TJ,TSTG

RMB2S RMB4S RMB6S Units

200

400

600

140

280

420

V

200

400

600

0.5

A

0.8

30

A

1.0

5

100

150

13

85

-55 to +150

V

µA

nS

pF

°C/W

°C

Note: 1. Pulse Test with PW=300us, 1% Duty Cycle

2. Reverse Recovery Test Condition: IF=0.5A, IR=1.0A, IRR=0.25A

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