RTL020P02FRATR(RevB) 查看數據表（PDF） - ROHM Semiconductor
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RTL020P02FRATR Datasheet PDF : 8 Pages
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Transistors
zElectrical characteristic curves
10
VDS= −10V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
0.1
Ta= −25°C
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.1 Typical Transfer Characteristics
1000
VGS= −2.5V
VGS= −4.0V
VGS= −4.5V
100
Ta=25°C
Pulsed
10
0.01
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
RTLR0T2L00P2002PF0R2A
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS= −4.5V
Pulsed
10
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
1000
VGS= −4V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS= −2.5V
Pulsed
10
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
10
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
10
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta= −25°C
0.1
VGS=0V
Pulsed
0.01
0.0
0.5
1.0
1.5
2.0
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
10000
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
Coss
Crss
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
10000
1000
tf
100
td (off)
Ta=25°C
VDD= −15V
VGS= −4.5A
RG=10Ω
Pulsed
td (on)
10
tr
1
0.01
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.8 Switching Characteristics
8
Ta=25°C
7
VDD= −15V
ID= −2A
6
RG=10Ω
Pulsed
5
4
3
2
1
0
0
1
2
3
4
5
6
TOTAL GATE CHARGE : Qg (nC)
Fig.9 Dynamic Input Characteristics
Rev.B
3/4
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