RTL020P02FRA 查看數據表（PDF） - ROHM Semiconductor

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产品描述 (功能)

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RTL020P02FRA

2.5V Drive Pch MOSFET

ROHM Semiconductor 

Transistors

2.5V Drive Pch MOSFET

RTL0200PP0022FRA

RTLR0T2L00P2002PF0R2A

AEC-Q101 Qualified

zStructure

Silicon P-channel

MOSFET

zDimensions (Unit : mm)

TUMT6

zFeatures

1) Low on-resistance. (180mΩ at 2.5V)

2) High power package.

3) High speed switching.

4) Low voltage drive. (2.5V)

zApplications

DC-DC converter

Abbreviated symbol : WU

zPackaging specifications

Package

Type

Code

Quantity (pcs)

RRTTLL002200PP0022FRA

Taping

TR

3000

zEquivalent circuit

(6)

(5)

∗2

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Continuous

Pulsed

Source current

(Body diode)

Continuous

Pulsed

Total power dissipation

Channel temperature

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Symbol

VDSS

VGSS

ID

IDP ∗1

IS

ISP ∗1

PD ∗2

Tch

Tstg

(1)

(2)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Limits

Unit

−20

V

±12

V

±2

A

±8

A

−0.8

A

−8

A

1

W

150

°C

−55 to +150

°C

zThermal resistance

Parameter

Channel to ambient

∗ Mounted on a ceramic board.

Symbol

Rth(ch-a) ∗

Limits

125

Unit

°C / W

(4)

∗1

(1) Drain

(2) Drain

(3) Gate

(3) (4) Source

(5) Drain

(6) Drain

20190527-Rev.C 1/4

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