RU4A 查看數據表（PDF） - Diode Semiconductor Korea
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RU4A Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
RU4Y(Z)---RU4YX(Z)
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
t rr
+0.5A
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(-)
0
-0.25A
-1 .0A
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ
2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
1cm
SET TIMEBASEFOR10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
RU4YX
10
RU4Y,RU4Z
1.0
RU4B
RU4,RU4A
RU4C
0.1
0.04
0.01
0
TJ=25
Pulse Width=300µS
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- FORWARD DERATING CURVE
4.0
RU4,RU4A,RU4B
3.0
RU4Y,RU4Z
RU4YX
RU4C
2.0
Single Phase
Half Wave 60Hz
1.0
Resistive or
Inductive Load
0
0
25
50
75
100 125 150
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGE CURRENT
100
90
80
70
60
50
40
30
20
10
01
RU4YX
TJ=25
8.3ms Single Half
Sine-Wave
RU4,RU4A,
RU4B,RU4C
RU4Y,RU4Z
5
10
50
NUMBER OF CYCLES AT 60Hz
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
RU4Y,RU4Z,RU4
100
70
50
TJ=25
RU4A,RU4B,
20
RU4C,RU4YX
10
0.1 0.2 0.4 1 2 4 10 20 40 100
REVERSE VOLTAGE,VOLTS
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