SB345EA-G 查看數據表（PDF） - ComChip
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SB345EA-G Datasheet PDF : 3 Pages
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ESD Leaded Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (SB320E-G Thru. SB3100E-G)
Fig.1- Forward Current Derating Curve
3.6
Fig.2- Maximum Non-repetitive Peak
Forward Surge Current
100
3.0
2.4
1.8 SB320E-G ~ SB345E-G
10
1.2
SB350E-G ~ SB3100E-G
0.6 single phase half wave 60Hz
resistive or inductive load
3.75”(9.5mm) lead length
0
0
25
50
75
100
125 150 175
Lead Temperature, ( OC)
TL=110°C
8.3mS single half sine-wave
(JEDEC Method)
1
1
10
100
Number of Cycles at 60Hz
Fig.3- Typical Instantaneous Forward
Characteristics
100
SB320E-G - SB345E-G
10
SB350E-G - SB360E-G
1.0
0.1 0
SB380E-G - SB3100E-G
0.2
0.4
0.6
0.8
1.0
Instantaneous Forward Voltage (V)
Fig.4A- Typical Reverse Characteristics
100
SB320E-G - SB345E-G
10
1.0
0.1
0.01
TJ=125°C
TJ=75°C
TJ=25°C
0.001
0
20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
1000
Fig.5- Typical Junction Capacitance
100
1000
100
Fig. 4B- Typeical Reverse Characteristic
TJ=150°C
TJ=125°C
TJ=100°C
10
SB350E-G - SB3100E-G
10
0.1
QW-BB042
1.0
TJ=25°C
f=1.0MHz
1.0
10
100
Reverse Voltage, (V)
TJ=25°C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage, ( %)
REV:A
Comchip Technology CO., LTD.
Page 2
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