SBS817-TL-E 查看數據表（PDF） - ON Semiconductor

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SBS817-TL-E

Schottky Barrier Diode 15V, 2A, Low VF, Non-Monolithic Dual EMH8 Common Cathode

ON Semiconductor 

SBS817

Electrical Characteristics at Ta=25°C (Value per element)

Parameter

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Reverse Recovery Time

Thermal Resistance

Symbol

VR

VF1

VF2

IR

C

trr

Rth(j-a)

Conditions

IR=1mA

IF=1.0A

IF=2.0A

VR=7.5V

VR=10V, f-1MHz

IF=IR=100mA, See specified Test Circuit.

When mounted on ceramic substrate (900mm2×0.8mm)

min

15

Ratings

typ

0.33

0.39

35

65

max

0.39

0.46

300

10

Unit

V

V

V

μA

pF

ns

°C / W

*: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8), and between Terminal 3

and Terminal 5 (or 6).

trr Test Circuit

Duty≤10%

50Ω

100Ω

10Ω

10μs

--5V

trr

Ordering Information

Device

SBS817-TL-E

Package

EMH8

Shipping

3,000pcs./reel

memo

Pb Free

3

2

1.0

7

5

3

2

0.1

7

5

3

2

0.01

7

5

3

2

0.001

0

IF -- VF

0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50

Forward Voltage, VF -- V

IT12192

1.0E+05

1.0E+04

1.0E+03

1.0E+02

IR -- VR

Ta=125°C

100°C

75°C

50°C

25°C

1.0E+01

1.0E+00

0°C

--25°C

1.0E-01

0

2

4

6

8

10

12

14

16

Reverse Voltage, VR -- V

IT12193

No. A0734-2/6

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