IRFD9220PBF(2008) 查看數據表（PDF） - Vishay Semiconductors
零件编号
产品描述 (功能)
生产厂家
IRFD9220PBF Datasheet PDF : 8 Pages
| |||
IRFD9220, SiHFD9220
Vishay Siliconix
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
RG
• dV/dt controlled by RG
+
• ISD controlled by duty factor "D"
• D.U.T. - device under test
- VDD
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 V*
D.U.T. ISD waveform
Reverse
recovery
Body diode forward
current
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91141.
Document Number: 91141
S-Pending-Rev. A, 13-Jun-08
www.vishay.com
7
Share Link: 