SI1035X-T1-GE3 查看數據表（PDF） - Vishay Semiconductors

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SI1035X-T1-GE3

Complementary N- and P-Channel 20 V (D-S) MOSFET

Vishay Semiconductors 

Si1035X

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

VDS = VGS, ID = - 250 µA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 2.8 V

VDS = 0 V, VGS = ± 4.5 V

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Drain-Source On-State

Resistancea

RDS(on)

Forward Transconductancea

gfs

Diode Forward Voltagea

VSD

Dynamicb

VDS = 16 V, VGS = 0 V

VDS = - 16 V, VGS = 0 V

VDS = 16 V, VGS = 0 V, TJ = 85 °C

VDS = - 16 V, VGS = 0 V, TJ = 85 °C

VDS = 5 V, VGS = 4.5 V

VDS = - 5 V, VGS = - 4.5 V

VGS = 4.5 V, ID = 200 mA

VGS = - 4.5 V, ID = - 150 mA

VGS = 2.5 V, ID = 175 mA

VGS = - 2.5 V, ID = 125 mA

VGS = 1.8 V, ID = 150 mA

VGS = - 1.8 V, ID = - 100 mA

VDS = 1.5 V, ID = 40 mA

VDS = - 1.5 V, ID = - 30 mA

VDS = 10 V, ID = 200 mA

VDS = - 10 V, ID = - 150 mA

IS = 150 mA, VGS = 0 V

IS = - 150 mA, VGS = 0 V

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

N-Channel

VDS = 10 V, VGS = 4.5 V, ID = 150 mA

Qgs

P-Channel

Qgd VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA

Turn-On Time

N-Channel

tON

VDD = 10 V, RL = 47 

ID  250 mA, VGEN = 4.5 V, Rg = 10 

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

Turn-Off Time

P-Channel

N-Ch

tOFF

VDD = - 10 V, RL = 65 

ID  - 150 mA, VGEN = - 4.5 V, Rg = 10  P-Ch

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Min.

0.40

- 0.40

250

- 200

Typ.

± 0.5

± 0.5

± 1.5

± 1.0

1

-1

0.5

0.4

750

1500

75

150

225

450

Max. Unit

V

± 1.0

± 1.0

µA

± 3.0

± 3.0

500

nA

- 500

10

µA

- 10

mA

5

8

7

12



9

15

10

20

S

1.2

V

- 1.2

pC

75

80

ns

75

90

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

2

Document Number: 71426

S10-2544-Rev. C, 08-Nov-10

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