SI1035X-T1-GE3 查看數據表（PDF） - Vishay Semiconductors
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SI1035X-T1-GE3 Datasheet PDF : 10 Pages
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Si1035X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1000
50
TJ = 125 °C
ID = 200 mA
40
100
TJ = 25 °C
30
ID = 175 mA
20
10
TJ = 50 °C
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.3
0
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
3.0
0.2
2.5
ID = 0.25 mA
0.1
2.0
0.0
1.5
- 0.1
- 0.2
1.0
VGS = 2.8 V
0.5
- 0.3
- 50 - 25 0
25 50 75 100 125
TJ - Temperature (°C)
Threshold Voltage Variance vs. Temperature
7
0.0
- 50 - 25
0
25 50 75
TJ - Temperature (°C)
IGSS vs. Temperature
100 125
6
5
4
3
2
1
0
- 50 - 25 0
25 50 75 100 125
TJ - Temperature (°C)
BVGSS vs. Temperature
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4
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
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