Si1035X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1000
50
TJ = 125 °C
40
100
TJ = 25 °C
10
TJ = - 55 °C
ID = 150 mA
30
20
10
ID = 125 mA
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.3
3.0
0.2
ID = 0.25 mA
0.1
0.0
2.5
2.0
1.5
VGS = 2.8 V
- 0.1
1.0
- 0.2
0.5
- 0.3
- 50 - 25 0
25 50 75 100 125
TJ - Temperature (°C)
Threshold Voltage Variance vs. Temperature
0
0.0
- 50 - 25
0
25 50 75
TJ - Temperature (°C)
IGSS vs. Temperature
100 125
-1
-2
-3
-4
-5
-6
-7
- 50 - 25 0
25 50 75 100 125
TJ - Temperature (°C)
BVGSS vs. Temperature
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Document Number: 71426
S10-2544-Rev. C, 08-Nov-10