SI2301BDS 查看數據表（PDF） - KEXIN Industrial
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SI2301BDS Datasheet PDF : 5 Pages
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SMD Type
MOSFET
P-Channel Enhancement MOSFET
SI2301BDS (KI2301BDS)
■ Typical Characterisitics
Output Characteristics
10
Transfer Characteristics
10
V GS = 5 thru 2.5 V
8
T C = -55 。C
8
2V
25 C
6
6
125 C
4
2
0
0
0.5
1.5 V
1V
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
800
0.4
0.3
0.2
V GS = 2.5 V
0.1
0.0
0
V GS = 4.5 V
2
4
6
8
10
I D - Drain Current (A)
Gate Charge
5
V DS = 10 V
ID = 2.8 A
4
600
C iss
400
200
C oss
C rss
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V GS = 4.5 V
ID = 2.8 A
1.4
3
1.2
2
1.0
1
0.8
0
0
1
2
3
4
5
Qg - Total Gate Charge (nC)
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature ( C)
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