BB151 查看數據表（PDF） - Philips Electronics
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BB151 Datasheet PDF : 8 Pages
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Philips Semiconductors
Low-voltage variable capacitance diode
Product specification
BB151
FEATURES
• Very low capacitance spread
• Excellent linearity
• Very small plastic SMD package
• C3: 10.6 pF; ratio: 1.53
• Very low series resistance.
APPLICATIONS
• Voltage controlled oscillators (VCO).
DESCRIPTION
The BB151 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the SOD323 very
small plastic SMD package.
PINNING
PIN
1
2
cathode
anode
DESCRIPTION
4 columns
k1
2a
Marking code: PA.
Cathode side indicated by a bar.
MAM130
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VR
continuous reverse voltage
IF
continuous forward current
Tstg
storage temperature
Tj
operating junction temperature
MIN.
−
−
−55
−55
MAX.
10
20
+150
+150
UNIT
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IR
reverse current
VR = 10 V; see Fig.3
−
−
10 nA
VR = 10 V; Tj = 85 °C; see Fig.3
−
−
200 nA
rs
diode series resistance f = 470 MHz; VR is the value at which Cd = 9 pF −
0.4 0.55 Ω
Cd
diode capacitance
f = 1 MHz; see Figs 2 and 4
VR = 0.5 V
−
19.1 −
pF
VR = 1 V
15.4 16.2 17 pF
VR = 2 V
−
12.8 −
pF
VR = 3 V
9.9 10.6 11.3 pF
VR = 4 V
−
9
−
pF
CC-----dd---((--13---VV---))
capacitance ratio
f = 1 MHz
1.45 1.53 −
CC-----dd---((--14---VV---))
capacitance ratio
f = 1 MHz
−
1.8 −
2000 Nov 07
2
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