SUM110N04-2M3L 查看數據表（PDF） - Vishay Semiconductors
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SUM110N04-2M3L Datasheet PDF : 6 Pages
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SUM110N04-2m3L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
VGS = 10 V
ID = 30 A
1.7
1.4
TJ = 150 °C
TJ = 25 °C
10
1.1
0.8
0.5
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1000
1
0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
50
100
IAV (A) at TA = 25 °C
10
1 IAV (A) at TA = 150 °C
48
ID = 10 mA
46
44
42
0.1
0.00001 0.0001 0.001 0.01 0.1
1
10
tin (s)
Avalanche Current vs. Time
40
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs.
Junction Temperature
www.vishay.com
4
Document Number: 73040
S-80272-Rev. B, 11-Feb-08
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