UT51C164MC-25 查看數據表（PDF） - Utron Technology Inc
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UT51C164MC-25 Datasheet PDF : 26 Pages
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UTRON
Rev 1.5
UT51C164
256K X 16 BIT EDO DRAM
AC CHARACTERISTICS (TA = 0℃ to 70°C)
Test condition: VDD = 5.0V±0.5V, VIH / VIL=3V / 0V, VOH / VOL=2.0 / 0.8)
SYMBOL PARAMETER
25
35
40
50
UNIT NOTE
Min. Max. Min. Max. Min. Max. Min. Max.
1 tRAS RAS Pulse Width
25 75K 35 75K 40 75K 50 75K ns
2 tRC Read or Write Cycle Time 45
70
75
90
ns
3 tRP RAS Precharge Time
15
25
25
30
ns
4 tCSH CAS Hold Time
20
35
40
50
ns
5 tCAS CAS Pulse Width
5
8
8
10
ns
6 tRCD RAS to CAS Delay
10 17 13 24 17 28 19 36 ns
7
tRCS
Read Command Setup
Time
0
0
0
0
ns *1
8 tASR Row Address Setup Time 0
0
0
0
ns
9 tRAH Row Address Hold Time
5
6
7
9
ns
10
tASC
Column Address Setup
Time
0
0
0
0
ns
11
tCAH
Column Address Hold
Time
4
6
7
9
ns
12 tRSH RAS to CAS Hold Time 7
10
12
14
ns
13
tCRP
CAS to RAS Precharge
Time
3
5
5
5
ns
Read Command Hold
14 tRCH Time Reference CAS
0
0
0
0
ns *2
Read Command Hold
15 tRRH Time Reference RAS
0
0
0
0
ns *2
16 tROH RAS Hold Time
7
7
8
10
ns
Referenced to OE
17 tOAC Access Time from OE
8
11
12
14 ns *9
18 tCAC Access Time from CAS
7
11
12
14 ns *3,4,11
19 tRAC Access Time from RAS
20
tCAA
Access Time From
Column Address
25
35
40
50 ns *3,5,6
12
18
20
24 ns *3,4,7
21
tLZ
OE or CAS to Low-Z
Output
0
0
0
0
ns *13
22
tHZ
OE or CAS to High-Z
Output
Column Address Hold
23 tAR Time from RAS
0 5 0 5 0 6 0 8 ns *13
19
25
30
40
ns
24
tRAD
RAS to Column Address
Delay Time
8
12 10 17 12 20 14 26 ns
*8
25 tT Transition Time
1.5 50 1.5 50 1.5 50 1.5 50 ns *12
26
tCWL
Write Command to CAS
Lead Time
5
8
10
10
ns
27
tWCS
Write Command Setup
Time
0
0
0
0
ns *9,10
28 tWCH Write Command Hold time 4
5
6
7
ns
29 tWP Write Pulse Width
4
5
6
7
ns
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
7
P90005
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