SI2328DS(2001) 查看數據表（PDF） - Vishay Semiconductors
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SI2328DS Datasheet PDF : 4 Pages
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Si2328DS
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Symbol
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Source-Drain Reverse Recovery Time
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
Test Conditions
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 70_C
VDS w 15 V, VGS = 10 V
VGS = 10 V, ID = 1.5 A
VDS = 15 V, ID = 1.5 A
IS = 1.0 A, VGS = 0 V
VDS = 50 V, VGS = 10 V, ID = 1.5 A
VDD = 50 V, RL = 33 W
ID ^ 0.2 A, VGEN = 10 V, RG = 6 W
IF = 1.5 A, di/dt = 100 A/ms
Limits
Min Typ Max Unit
100
V
2
"100
nA
1
mA
75
6
A
0.195
0.250
W
4
S
0.8
1.2
V
3.3
4.0
0.47
nC
1.45
7
11
11
17
ns
9
15
10
15
50
100
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
12
12
VGS = 10, 9, 8 V
7V
9
9
6V
6
6
5V
3
3
3, 2, 1 V
4V
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
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2
Transfer Characteristics
TC = 125_C
25_C
–55_C
2
4
6
8
VGS – Gate-to-Source Voltage (V)
Document Number: 71796
S-05372—Rev. A, 25-Dec-01
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