SMD Type
MOSFET
N-Channel Enhancement MOSFET
SI2328DS (KI2328DS)
■ Typical Characterisitics
Output Characteristics
12
7V
V GS = 10, 9, 8 V
Transfer Characteristics
12
9
9
6V
6
6
3
0
0
0.6
5V
3, 2, 1 V
4V
2
4
6
8
10
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.5
0.4
V GS = 10 V
0.3
0.2
0.1
0.0
0
3
6
9
12
ID − Drain Current (A)
Gate Charge
20
V DS = 50 V
ID = 1.5 A
16
3
0
0
250
T C = 125 C
25 C
−55 C
2
4
6
8
VGS − Gate-to-Source Voltage (V)
Capacitance
200
C iss
150
100
50
C oss
C rss
0
0
20
40
60
80
100
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
V GS = 10 V
I D = 1.5 A
2.0
12
1.5
8
1.0
4
0.5
0
0
1
2
3
4
5
6
Qg − Total Gate Charge (nC)
0.0
−50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature ( C)
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