SI2328DS-HF 查看數據表（PDF） - KEXIN Industrial

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SI2328DS-HF

N-Channel MOSFET

KEXIN Industrial 

SMD Type

N-Channel MOSFET

SI2328DS-HF (KI2328DS-HF)

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Gate Threshold Voltage

On-State Drain Current *1

Static Drain-Source On-Resistance *1

Forward Transconductance *1

Gate Resistance

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Maximum Body-Diode Continuous Current

Diode Forward Voltage

Symbol

VDSS

IDSS

IGSS

VGS(th)

ID(on)

RDS(On)

gFS

Rg

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

trr

IS

VSD

Test Conditions

ID=1mA, VGS=0V

VDS=100V, VGS=0V

VDS=100V, VGS=0V, Ta=70℃

VDS=0V, VGS=±20V

VDS=VGS , ID=250μA

VDS ≥ 15 V, VGS = 10 V

VGS=10V, ID=1.5A

VDS=15V, ID=1.5A

VGS=10V, VDS=50V, ID=1.5A

ID=0.2A, VDS=50V, ,VGEN=10V

RL=33Ω,RG=6Ω

IF= 1.5A, dI/dt= 100A/μs

IS=1.0A,VGS=0V

*1 Pulse test: PW ≤ 300us duty cycle≤ 2%.

■ Marking

Marking

D8* F

MOSFET

Min Typ Max Unit

100

V

1

μA

75

±100 nA

2

4

V

6

A

250 mΩ

4

S

0.5

2.4 Ω

3.3 4

0.47

nC

1.45

7 11

11 17

9 15 ns

10 15

50 100

1.0 A

0.8 1.2 V

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