DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SK12B 查看數據表(PDF) - TSC Corporation

零件编号
产品描述 (功能)
生产厂家
SK12B Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
SK12B - SK115B
Taiwan Semiconductor
1A, 20V - 150V Surface Mount Schottky Barrier Rectifier
FEATURES
Low power loss, high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
VRRM
IFSM
Package
1
A
20 - 150
V
30
A
DO-214AA (SMB)
Configuration
Single Die
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
Part no. with suffix Hmeans AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.093 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SK SK SK SK SK
SYMBOL
12B 13B 14B 15B 16B
Marking code on the device
SK SK SK SK SK
12B 13B 14B 15B 16B
Repetitive peak reverse voltage
VRRM
20 30 40 50 60
Reverse voltage, total rms value
VR(RMS)
14
21
28
35
42
Maximum DC blocking voltage
VDC
20 30 40 50 60
Forward current
IF(AV)
1
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
IFSM
30
on rated load per diode
Critical rate of rise of off-state voltage dV/dt
10000
SK
19B
SK
19B
90
63
90
SK SK
UNIT
110B 115B
SK SK
110B 115B
100 150 V
70 105 V
100 150 V
A
A
V/μs
Junction temperature
TJ
- 55 to +125
- 55 to +150
°C
Storage temperature
TSTG
- 55 to +150
°C
1
Version:K1701

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]