SFS9510 查看數據表（PDF） - Fairchild Semiconductor

零件编号

产品描述 (功能)

生产厂家

SFS9510

Advanced Power MOSFET

Fairchild Semiconductor 

Advanced Power MOSFET

FEATURES

n Avalanche Rugged Technology

n Rugged Gate Oxide Technology

n Lower Input Capacitance

n Improved Gate Charge

n 175oC Operating Temperature

n Extended Safe Operating Area

n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

n Low RDS(ON) : 0.912 Ω (Typ.)

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

EAS

IAR

EAR

dv/dt

PD

TJ , TSTG

TL

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (TC=25oC)

Continuous Drain Current (TC=100oC)

Drain Current-Pulsed

O1

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

O2

Avalanche Current

O1

Repetitive Avalanche Energy

O1

Peak Diode Recovery dv/dt

O3

Total Power Dissipation (TC=25oC)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

SFS9510

BVDSS = -100 V

RDS(on) = 1.2 Ω

ID = -2.5 A

TO-220F

1

2

3

1.Gate 2. Drain 3. Source

Value

-100

-2.5

-1.8

-10

±30

50

-2.5

1.6

-6.5

16

0.11

- 55 to +175

300

Units

V

A

A

V

mJ

A

mJ

V/ns

W

W/oC

oC

Thermal Resistance

Symbol

RθJC

RθJA

Characteristic

Junction-to-Case

Junction-to-Ambient

Typ.

--

--

Max.

9.38

62.5

Units

oC/W

Rev. C

Share Link: