MC-4532CC727EF-A75 查看數據表（PDF） - Elpida Memory, Inc

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MC-4532CC727EF-A75

32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

Elpida Memory, Inc 

MC-4532CC727

Asynchronous Characteristics

Parameter

Symbol

-A 75

Unit

MIN.

MAX.

ACT to REF/ACT command period (operation)

tRC

67.5

ns

REF to REF/ACT command period (refresh)

tRC1

67.5

ns

ACT to PRE command period

tRAS

45

120,000

ns

PRE to ACT command period

tRP

20

ns

Delay time ACT to READ/WRITE command

tRCD

20

ns

ACT(one) to ACT(another) command period

tRRD

15

ns

Data-in to PRE command period

tDPL

8

ns

Data-in to ACT(REF) command

/CAS latency = 3

tDAL3

1CLK+22.5

ns

period (Auto precharge)

/CAS latency = 2

tDAL2

1CLK+20

ns

Mode register set cycle time

tRSC

2

CLK

Transition time

tT

0.5

30

ns

Refresh time (4,096 refresh cycles)

tREF

64

ms

Note This device can satisfy the tDAL3 spec of 1CLK+20 ns for up to and including 125 MHz operation.

Note

1

1

Data Sheet E0052N20

9

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