AMP04 查看數據表（PDF） - Analog Devices
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AMP04 Datasheet PDF : 17 Pages
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AMP04
Parameter
Symbol
Conditions
Limit
Unit
Power Supply Rejection
PSRR
G = 1000
4.0 V ≤ VS ≤ 12 V
G=1
G = 10
G = 100
G = 1000
80
dB min
85
dB min
95
dB min
95
dB min
95
dB min
GAIN (G = 100 K/RGAIN)
Gain Equation Accuracy
G = 1 to 100
0.75
% max
OUTPUT
Output Voltage Swing High
VOH
Output Voltage Swing Low
VOL
POWER SUPPLY
Supply Current
ISY
RL = 2 kΩ
RL = 2 kΩ
VS = ± 15
4.0
V min
2.5
mV max
900
µA max
700
µA max
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .± 18 V
Common-Mode Input Voltage2 . . . . . . . . . . . . . . . . . . . ± 18 V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite
Storage Temperature Range
DICE CHARACTERISTICS
RGAIN
1
RGAIN
8
P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
–IN 2
7 V+
AMP04E, F . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
+IN 3
Junction Temperature Range
6 VOUT
P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C
Package Type
JA3
8-Lead Plastic DIP (P) 103
8-Lead SOIC (S)
158
JC
Unit
43
°C/W
43
°C/W
NOTES
1Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2For supply voltages less than ± 18 V, the absolute maximum input voltage is
equal to the supply voltage.
3θJA is specified for the worst case conditions, i.e., θJA is specified for device in
socket for a P-DIP package; θJA is specified for device soldered in circuit board
for SOIC package.
V– 4
5 REF
AMP04 Die Size 0.075 × 0.99 inch, 7,425 sq. mils.
Substrate (Die Backside) Is Connected to V+.
Transistor Count, 81.
REV. C
–5–
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