BAW56SRA 查看數據表（PDF） - NXP Semiconductors.

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产品描述 (功能)

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BAW56SRA

Quad high-speed switching diodes

NXP Semiconductors. 

Nexperia

2.0

Cd

(pF)

1.5

1.0

aaa-020908

10

IFSM

(A)

1

BAW56SRA

Quad high-speed switching diodes

aaa-020909

0.5

0.0

0

5

10

15

20

25

VR (V)

f = 1MHz; Tamb = 25 °C

Fig. 6. Diode capacitance as a function of reverse

voltage; typical values

10-1

10-1

1

10

102

103

tp (ms)

Based on square wave currents.

Tamb = 25 °C

Fig. 7. Non-repetitive forward current as a function of

pulse duration; maximum values

11. Test information

RS = 50 Ω

D.U.T.

IF

SAMPLING

OSCILLOSCOPE

tr

tp

10 %

t

+ IF

trr

t

V = VR + IF × RS

Ri = 50 Ω

VR

mga881

90 %

input signal

(1)

output signal

(1) IR = 1 mA

Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05

Oscilloscope: rise time tr = 0.35 ns

Fig. 8. Reverse recovery time test circuit and waveforms

I

1 kΩ

450 Ω

I

V

90 %

RS = 50 Ω

D.U.T.

OSCILLOSCOPE

Ri = 50 Ω

VFR

Fig. 9.

10 %

t

t

tr

tp

input signal

output signal

mga882

Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005

Forward recovery voltage test circuit and waveforms

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

BAW56SRA

Product data sheet

All information provided in this document is subject to legal disclaimers.

14 September 2018

© Nexperia B.V. 2018. All rights reserved

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