SMBT 6428
SMBT 6429
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
SMBT 6428
SMBT 6429
Collector-base breakdown voltage
IC = 10 µA
SMBT 6428
SMBT 6429
Emitter-base breakdown voltage
IE = 1 µA
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
Collector cutoff current
VCE = 30 V, IB = 0
Emitter-base cutoff current
VEB = 5 V, IC = 0
DC current gain
IC = 10 µA, VCE = 5 V
IC = 100 µA, VCE = 5 V
IC = 1 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
SMBT 6428
SMBT 6429
SMBT 6428
SMBT 6429
SMBT 6428
SMBT 6429
SMBT 6428
SMBT 6429
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter voltage
IC = 1 mA, VCE = 5 V
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
50
–
45
–
V(BR)CB0
60
–
55
–
V(BR)EB0 6
–
ICB0
–
–
–
–
ICE0
–
–
IEB0
–
–
hFE
VCEsat
VBE(on)
250 –
500 –
250 –
500 –
250 –
500 –
250 –
500 –
–
–
–
–
0.56 –
V
–
–
–
–
–
10 nA
10
µA
100 nA
10
–
–
–
650
1250
–
–
–
–
V
0.2
0.6
0.66
1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2