SSF2302 查看數據表（PDF） - GOOD-ARK
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SSF2302 Datasheet PDF : 6 Pages
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SSF2302
20V N-Channel MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
IGSS
VGS=±8V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Min Typ Max
20
1
±100
0.65 0.95 1.2
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
VGS=2.5V, ID=3.1A
VGS=4.5V, ID=3.6A
VDS=5V,ID=3.6A
VDS=10V,VGS=0V,
F=1.0MHz
VDD=10V, RL = 2.8 Ω
VGS=4.5V,RGEN=6Ω,
ID=3.6A,
VDS=10V,ID=3.6A,VGS=4.5V
VGS=0V,IS=0.94A
70
115
45
60
8
300
120
80
7
15
55
80
16
60
10
25
4.0
10
0.65
1.5
0.76 1.2
0.94
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Unit
V
μA
nA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
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Rev.2.0
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