BSR20 查看數據表（PDF） - Philips Electronics
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BSR20 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP high-voltage transistors
Product specification
BSR20; BSR20A
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
BSR20
ICBO
collector cut-off current
BSR20A
IEBO
hFE
hFE
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
BSR20
BSR20A
DC current gain
BSR20
BSR20A
DC current gain
BSR20
BSR20A
collector-emitter saturation
voltage
collector capacitance
transition frequency
BSR20
BSR20A
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = −100 V
−
IE = 0; VCB = −100 V; Tamb = 100 °C −
IE = 0; VCB = −120 V
−
IE = 0; VCB = −120 V; Tamb = 100 °C −
IC = 0; VEB = −4 V
−
IC = −1 mA; VCE = −5 V
30
50
IC = −10 mA; VCE = −5 V
40
60
IC = −50 mA; VCE = −5 V
40
50
IC = −10 mA; IB = −1 mA
−
IC = −50 mA; IB = −5 mA
−
I E = 0; VCB = −10 V; f = 1 MHz
−
IC = −10 mA; VCE = −10 V;
f = 100 MHz
100
100
−100
−100
−50
−50
−50
−
−
180
240
−
−
−200
−500
6
400
300
nA
µA
nA
µA
nA
mV
mV
pF
MHz
MHz
1997 Apr 21
4
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