Q67000-S200 查看數據表（PDF） - Siemens AG
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Q67000-S200 Datasheet PDF : 9 Pages
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BSP 298
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 0.5 A, VGS = 10 V
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
7.5
4.6
Ω
V
98%
6.5
4.0
RDS (on) 6.0
5.5
5.0
VGS(th) 3.6
3.2
typ
4.5
2.8
4.0
98%
3.5
3.0
typ
2.5
2.4
2%
2.0
1.6
2.0
1.2
1.5
1.0
0.5
0.0
-60
-20
20
60
100 °C 160
Tj
0.8
0.4
0.0
-60
-20
20
60
100 °C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 1
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 1
nF
C
10 0
A
I
F
10 0
Ciss
10 -1
Coss
10 -2
0
Crss
5 10 15 20 25 30 V 40
VDS
Semiconductor Group
7
10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -2
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
Sep-12-1996
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