BSP 298
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 1.35 A, VDD = 50 V
RGS = 25 Ω, L = 125 mH
140
mJ
120
EAS 110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
480
V
460
V(BR)DSS
450
440
430
420
410
400
390
380
370
360
-60
-20
20
60
100 °C 160
Tj
Safe operating area ID=f(VDS)
parameter : D = 0.01, TC=25°C
Semiconductor Group
8
Sep-12-1996