TISP1072F3DR-S 查看數據表（PDF） - Bourns, Inc

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TISP1072F3DR-S

DUAL FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

Bourns, Inc 

TISP1xxxF3 Overvoltage Protector Series

Electrical Characteristics for T and G or R and G Terminals, TA = 25 °C (Unless Otherwise Noted)

IDRM

Parameter

Repetitive peak off-

state current

Test Conditions

VD = VDRM, 0 °C < TA < 70 °C

V(BO)

V(BO)

I(BO)

VFRM

VT

VF

IH

dv/dt

ID

Breakover voltage

Impulse breakover

voltage

Breakover current

Peak forward recovery

voltage

On-state voltage

On-state voltage

Holding current

Critical rate of rise of

off-state voltage

Off-state current

dv/dt = -250 V/ms, RSOURCE = 300 Ω

dv/dt ≤ -1000 V/µs, Linear voltage ramp,

Maximum ramp value = -500 V

RSOURCE = 50 Ω

dv/dt = -250 V/ms, RSOURCE = 300 Ω

dv/dt ≤ +1000 V/µs, Linear voltage ramp,

Maximum ramp value = +500 V

RSOURCE = 50 Ω

IT = -5 A,t W = 100 µs

IT = +5 A,t W = 100 µs

IT = -5 A,d i/dt = +30 mA/ms

Linear voltage ramp, Maximum ramp value < 0.85VDRM

VD = -50 V

f = 1 MHz, Vd = 0.1 Vr .m.s.,V D = 0

Coff Off-state capacitance f = 1 MHz, Vd = 0.1 Vr .m.s.,V D = -5 V

f = 1 MHz, Vd = 0.1 Vr .m.s.,V D = -50 V

(see Note 4)

NOTE 5: Further details on capacitance are given in the Applications Information section.

Min Typ

‘1072F3

‘1082F3

‘1072F3

-78

‘1082F3

-92

-0.1

‘1072F3

3.3

‘1082F3

3.3

-0.15

-5

‘1072F3

150

‘1082F3

130

‘1072F3

65

‘1082F3

55

‘1072F3

30

‘1082F3

25

Max

-10

-72

-82

-0.6

-3

+3

-10

240

240

104

104

48

48

Unit

µA

V

V

A

V

V

V

A

kV/µs

µA

pF

Thermal Characteristics

Parameter

RθJA Junction to free air thermal resistance

Test Conditions

Ptot = 0.8 W, TA = 25 °C

5 cm2, FR4 PCB

Min Typ Max Unit

160 °C/W

SEPTEMBER 1993 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

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