TSDF54040X 查看數據表（PDF） - Vishay Semiconductors
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TSDF54040X
Vishay Semiconductors
TSDF54040X Datasheet PDF : 4 Pages
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TSDF54040X/TSDF54040XR
Vishay Semiconductors
All of following data and characteristics are valid for operating either
amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Test Conditions
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Tamb 60 °C
Storage temperature range
Symbol
Value
Unit
VDS
8
V
ID
30
mA
±IG1/G2SM
10
mA
±VG1/G2SM
6
V
Ptot
200
mW
TCh
150
°C
Tstg
–55 to +150 °C
Maximum Thermal Resistance
Tamb = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
RthChA
450
K/W
plated with 35µm Cu
Electrical DC Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test Conditions
Gate 1 - source
±IG1S = 10 mA, VG2S = VDS = 0
breakdown voltage
Gate 2 - source
±IG2S = 10 mA, VG1S = VDS = 0
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
+VG1S = 5 V, VG2S = VDS = 0
–VG1S = 5 V, VG2S = VDS = 0
±VG2S = 5 V, VG1S = VDS = 0
Drain current
Self-biased
operating current
VDS = 5 V, VG1S = 0, VG2S = 4 V
VDS = 5 V, VG1S = nc, VG2S = 4 V
Gate 2 - source cut- VDS = 5 V, VG1S = nc, ID = 20 µA
off voltage
Symbol Min. Typ. Max. Unit
±V(BR)G1SS 7
10 V
±V(BR)G2SS 7
10 V
+IG1SS
–IG1SS
±IG2SS
50 µA
100 µA
20 nA
IDSS
IDSP
50
250 µA
10 15 20 mA
VG2S(OFF) 0.8 1.0 1.4 V
www.vishay.com
2 (4)
Document Number 85087
Rev. 1, 12–Nov–01
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